advanced power n-channel enhancement mode electronics corp. power mosfet fast switching performance bv dss 30v single drive requirement r ds(on) 6m full isolation package i d 68a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice continuous drain current, v gs @ 10v 200805081 rohs-compliant product 1 68 drain-source voltage 30 gate-source voltage 20 continuous drain current, v gs @ 10v parameter rating AP9412AGI 43 pulsed drain current 1 250 total power dissipation 34.7 thermal data parameter storage temperature range -55 to 150 operating junction temperature range -55 to 150 g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 6 m v gs =4.5v, i d =30a - - 8 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 30 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 10 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =30a - 21 34 nc q gs gate-source charge v ds =24v - 3.6 nc q gd gate-drain ("miller") charge v gs =4.5v - 12 nc t d(on) turn-on delay time 2 v ds =15v - 9 - ns t r rise time i d =30a - 80 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 23 - ns t f fall time r d =0.5 -15- ns c iss input capacitance v gs =0v - 1790 2860 pf c oss output capacitance v ds =25v - 435 - pf c rss reverse transfer capacitance f=1.0mhz - 250 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 34 - ns q rr reverse recovery charge di/dt=100a/s - 33 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9412AGI
ap9412ag i fig 1. typical output characteristics fig 2. typical output characteristics ??? t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 4 5 6 7 8 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c 0 50 100 150 200 250 01234 v ds , drain-to-source voltage (v) i d , drain current (a) v g =4.0v t c =25 o c 10v 7.0v 6.0v 5.0v 0 20 40 60 80 100 120 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 7.0v 6.0v 5.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =40a 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics ??? t rr q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9412AGI 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c rss c oss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.0 2 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =18v v ds =24v i d =30a
package outline : to-220cfm millimeters min nom max a 4.50 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 9412agi part number logo date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 meet rohs requirement 5
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